Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs Review

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Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs ReviewPeople study the III-V Semiconductor have two good choices of reference book. One is written by Jiann S. Yuan with the title:"SiGe, GaAs, InP HBT". One is this book by William Liu. I found both are very up-to-date and detailed. But, Liu's is simply the more comprehensive one. Both talk a great deal about SiGe, GaAs and InP, but Yuan is focus on HBT. In the recent development, InP-based HEMT emerges to supercede HBT in the range from 6 to 10 GHz. You will find that Liu's book is more helpful in that regards.Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs Overview

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